Atomera Enters Joint Development Agreement With IQE To Bring High-Performance, Cost-Effective RF GaN To Market
The collaboration leverages Atomera’s recently announced application of Mears Silicon Technology™ (MST®) to silicon substrates for RF GaN and IQE’s compound semiconductor epitaxy expertise. Under the agreement, the
Atomera and IQE are working together to make better radio chips. When companies team up like this, it shows they believe in the technology and plan to sell it soon.
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